IRG4BC30KD-SPBF(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC30KD-SPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC30KD-SPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltageƒ

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

VCE(on)

Collector-to-Emitter Saturation Voltage

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance „

Zero Gate Voltage Collector Current

VFM

Diode Forward Voltage Drop

IGES

Gate-to-Emitter Leakage Current

600 — — V VGE = 0V, IC = 250µA

— 0.54 — V/°C VGE = 0V, IC = 1.0mA

— 2.21 2.7

IC = 16A

VGE = 15V

— 2.88 —

— 2.36 —

IC = 28A

See Fig. 2, 5

V IC = 16A, TJ = 150°C

3.0 — 6.0

VCE = VGE, IC = 250µA

— -12 — mV/°C VCE = VGE, IC = 250µA

5.4 8.1 — S VCE = 100V, IC = 16A

— — 250 µA VGE = 0V, VCE = 600V

— — 2500

VGE = 0V, VCE = 600V, TJ = 150°C

— 1.4 1.7

— 1.3 1.6

V IC = 12A

See Fig. 13

IC = 12A, TJ = 150°C

— — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

tsc

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

trr

Irr

Qrr

di(rec)M/dt

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak Reverse Recovery Current

Diode Reverse Recovery Charge

Diode Peak Rate of Fall of Recovery

During tb

Min.

—

—

—

—

—

—

—

—

—

—

10

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

67

11

25

60

42

160

80

0.60

0.58

1.18

—

58

42

210

160

1.69

7.5

920

110

27

42

80

3.5

5.6

80

220

180

160

Max.

100

16

37

—

—

250

120

—

—

1.6

—

—

—

—

—

—

—

—

—

—

60

120

6.0

10

180

600

—

—

Units

nC

ns

mJ

µs

ns

mJ

nH

pF

ns

A

nC

A/µs

Conditions

IC = 16A

VCC = 400V

See Fig.8

VGE = 15V

TJ = 25°C

IC = 16A, VCC = 480V

VGE = 15V, RG = 23Ω

Energy losses include "tail"

and diode reverse recovery

See Fig. 9,10,14

VCC = 360V, TJ = 125°C

VGE = 15V, RG = 10Ω , VCPK < 500V

TJ = 150°C,

See Fig. 11,14

IC = 16A, VCC = 480V

VGE = 15V, RG = 23Ω

Energy losses include "tail"

and diode reverse recovery

Measured 5mm from package

VGE = 0V

VCC = 30V

ƒ = 1.0MHz

See Fig. 7

TJ = 25°C See Fig.

TJ = 125°C 14

IF = 12A

TJ = 25°C See Fig.

TJ = 125°C 15

VR = 200V

TJ = 25°C See Fig.

TJ = 125°C

16 di/dt = 200Aµs

TJ = 25°C See Fig.

TJ = 125°C 17

2

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