IRF830AS Ver la hoja de datos (PDF) - International Rectifier
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IRF830AS Datasheet PDF : 10 Pages
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IRF830AS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ.
500 –––
––– 0.60
––– –––
2.0 –––
––– –––
––– –––
––– –––
––– –––
Max.
–––
–––
1.4
4.5
25
250
100
-100
Units
V
Ω
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
2.8 ––– –––
Qg
Total Gate Charge
––– ––– 24
Qgs
Gate-to-Source Charge
––– ––– 6.3
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 11
td(on)
Turn-On Delay Time
––– 10 –––
tr
Rise Time
––– 21 –––
td(off)
Turn-Off Delay Time
––– 21 –––
tf
Fall Time
––– 15 –––
Ciss
Input Capacitance
––– 620 –––
Coss
Output Capacitance
––– 93 –––
Crss
Reverse Transfer Capacitance
––– 4.3 –––
Coss
Output Capacitance
––– 886 –––
Coss
Output Capacitance
––– 27 –––
Coss eff. Effective Output Capacitance
––– 39 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
VDS = 400V
VGS = 10V, See Fig. 6 and 13
VDD = 250V
ID = 5.0A
RG = 14Ω
RD = 49Ω,See Fig. 10
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
230
5.0
7.4
Units
mJ
A
mJ
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
–––
–––
Max.
1.7
40
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 5.0
A showing the
integral reverse
G
––– ––– 20
p-n junction diode.
S
––– ––– 1.5
––– 430 650
––– 2.0 3.0
V TJ = 25°C, IS = 5.0A, VGS = 0V
ns TJ = 25°C, IF = 5.0A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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