SIHF720STRR-GE3(2020) Ver la hoja de datos (PDF) - Vishay Semiconductors
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SIHF720STRR-GE3 Datasheet PDF : 10 Pages
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www.vishay.com
IRF720S, SiHF720S, IRF720L, SiHF720L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-ambient
(PCB mount) a
RthJA
RthJA
Maximum junction-to-case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
TYP.
-
-
-
MAX.
62
40
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 Ab
VDS = 50 V, ID = 2.0 Ab
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 320 V,
see fig. 6 and 13 b
VDD = 200 V, ID = 3.3 A,
Rg = 18 , RD = 56 , see fig. 10 b
Gate input resistance
Rg
f = 1 MHz, open drain
Internal drain inductance
Internal source inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
400
-
2.0
-
-
-
-
1.7
-
-
-
-
-
-
-
-
-
-
1.2
-
-
TYP. MAX. UNIT
-
-
V
0.51
-
V/°C
-
4.0
V
-
± 100 nA
-
25
μA
-
250
-
1.8
-
-
S
410
-
120
-
pF
47
-
-
20
-
3.3
nC
-
11
10
-
14
-
ns
30
-
13
-
-
7.3
4.5
-
nH
7.5
-
Continuous source-drain diode current
Pulsed diode forward current a
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Forward turn-on time
IS
MOSFET symbol
showing the
D
-
-
3.3
integral reverse
A
G
ISM
p - n junction diode
-
-
13
S
VSD
TJ = 25 °C, IS = 3.3 A, VGS = 0 V b
-
-
1.6
V
trr
Qrr
-
TJ = 25 °C, IF = 3.3 A, di/dt = 100 A/μs b
-
270
600
ns
1.4
3.0
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
S20-0682-Rev. F, 07-Sep-2020
2
Document Number: 91044
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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