IRF530NS Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
fabricante
IRF530NS Datasheet PDF : 10 Pages
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IRF530NS/IRF530NL
1600
1200
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
Coss
400
Crss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 9.0A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 175° C
10
1
TJ = 25° C
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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