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20N120C3D Datasheet PDF : 8 Pages
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HGTG20N120C3D
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit - (Figure 19)
IEC = 20A
IEC = 1A, dIEC/dt = 200A/µs
IEC = 20A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
-
39
-
ns
-
20
-
ns
-
360
550
ns
-
300
400
ns
-
950
-
µJ
-
3365
-
µJ
-
4400 8000
µJ
-
2.6
3.4
V
-
-
50
ns
-
-
70
ns
-
-
0.6
oC/W
-
-
1.25
oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 19.
Typical Performance Curves (Unless Otherwise Specified)
45
40
35
30
25
20
15
10
5
0
25
VGE = 15V
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
70
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
60
50
40
30
20
10
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
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