HMJE13009A Ver la hoja de datos (PDF) - Hi-Sincerity Mocroelectronics
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HMJE13009A Datasheet PDF : 6 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 2/6
Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min. Typ. Max. Unit
• Off Characteristics
Collector-Emitter Sustaining Voltage
(IC=10mA, IB=0)
Collector Cutoff Current
(VCEV=Rated Value, VBE(off)=1.5Vdc
(VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100°C)
Emitter Cutoff Current (VEB=9Vdc, IC=0)
• Second Breakdown
VCEO(sus)
400
-
ICEV
-
-
-
-
IEBO
-
-
-
Vdc
1 mAdc
5
1 mAdc
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
Is/b
See Figure 1
See Figure 2
• On Characteristics
DC Current Gain (IC=0.5Adc, VCE=5Vdc)
DC Current Gain (IC=5Adc, VCE=5Vdc)
DC Current Gain (IC=8Adc, VCE=5Vdc)
DC Current Gain (IC=12Adc, VCE=5Vdc)
Collector-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc)
(IC=8Adc, IB=1.6Adc)
(IC=12Adc, IB=3Adc)
(IC=8Adc, IB=1.6Adc, TC=100°C)
Base-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc)
(IC=8Adc, IB=1.6Adc)
(IC=8Adc, IB=1.6Adc, TC=100°C)
• Dynamic Characteristics
*hFE1
*hFE2
*hFE3
*hFE4
15
-
-
13
-
22
8
-
-
5
-
-
*VCE(sat)1
-
-
1
*VCE(sat)2
-
- 1.5 Vdc
*VCE(sat)3
-
-
3
*VCE(sat)4
-
-
2
*VBE(sat)1
-
-
1.3
Vdc
*VBE(sat)2
-
- 1.6
*VBE(sat)3
-
- 1.5
Current Gain Bandwidth Product
(IC=500mAdc, VCE=10Vdc, f=1MHz)
Output Capacitance
(VCB=10Vdc, IE=0, f=0.1MHz)
• Switching Characteristics
fT
4
-
-
MHz
Cob
- 180 -
pF
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=125Vdc, IC=8A)
IB1=IB2=1.6A, tp=25uS
Duty Cycle≤1%
td
- 0.06 0.1
uS
tr
- 0.45 1
uS
ts
- 1.3 3
uS
tf
-
0.2 0.7
uS
• Inductive Load, Clamped
Voltage Storage Time
Crossover Time
(IC=8Adc, Vclamp=300Vdc)
(IB1=1.6Adc,VBE(off)=5Vdc, TC=100°C)
tsv
- 0.92 2.3
uS
tc
- 0.12 0.7
uS
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13009A
HSMC Product Specification
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