HLB122L Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
fabricante
HLB122L Datasheet PDF : 3 Pages
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UTC HLB122
CLASSIFICATION OF HFE1
RANK
Range
B1
10 ~ 17
B2
13 ~ 22
NPN EPITAXIAL SILICON TRANSISTOR
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
CHARACTERISTICS CURVE
Current Gain & Collector Current
100
125℃
75℃
25℃
10
Saturation Voltage & Collector Current
10000
1000
75℃
100
125℃
25℃
hFE @ VCE = 10V
1
1
10
100
1000
Collector Current, I C (mA)
Saturation Voltage & Collector Current
10000
VBE(sat) @ IC = 5IB
1000
25℃
75℃
125℃
10
1
1
1000
VCE(sat) @ IC = 5IB
10
100
1000
Collector Current, I C (mA)
ON Voltage & Collector Current
VBE(on) @ VCE = 10V
100
1
10
100
1000
Collector Current, IC (mA)
Capacitance & Reverse-Biased Voltage
100
10
1
0.1
1
10
100
Reverse-Biased Voltage (V)
100
1
10000
1000
100
10
1
1
10
100
1000
Collector Current(mA)
Safe Operating Area
P T=1ms
PT=100 ms
PT=1 s
10
100
1000
Forward Biased Voltage (V)
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
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QW-R213-014,A
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