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HFA15TB60S Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
fabricante
HFA15TB60S
Vishay
Vishay Semiconductors 
HFA15TB60S Datasheet PDF : 6 Pages
1 2 3 4 5 6
HFA15TB60S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
IF = 15 A
-
Maximum forward voltage
VFM
IF = 30 A
See fig. 1
-
IF = 15 A, TJ = 125 °C
-
Maximum reverse
leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
-
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
23
-
50
-
105
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/µs
VR = 200 V
-
4.5
-
6.5
-
84
-
241
Peak rate of fall of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
188
-
160
MAX.
-
60
120
6.0
10
180
600
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Tlead
RthJC
RthJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Weight
Marking device
Case style D2PAK
MIN.
-
-
-
-
-
TYP.
-
-
MAX.
300
1.7
-
80
2.0
-
0.07
-
HFA15TB60S
UNITS
°C
K/W
g
oz.
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93064
Revision: 22-Oct-08

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