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HEF4720BF

256-bit, 1-bit per word random access memories

Philips Electronics 

Philips Semiconductors

256-bit, 1-bit per word random access memories

Product specification

HEF4720B

HEF4720V

DESCRIPTION

The HEF4720B and HEF4720V are 256-bit, 1-bit per word

random access memories with 3-state outputs. The

memories are fully decoded and completely static.

Recommended supply voltage range for HEF4720B is 3 to

15 V and for HEF4720V is 4,5 to 12,5 V; minimum

stand-by voltage for both types is 3 V.

The use of LOCMOS gives the added advantage of very

low stand-by power. The circuits can be directly interfaced

with standard bipolar devices (TTL) without using special

interface circuits. The memory operates from a single

power supply. The separate chip select input (CS) allows

simple memory expansion when the outputs are wire-O

Red. If CS is HIGH, the outputs are floating and no new

information can be written into the memory. The signal at

O has the same polarity as the data input D, while the

signal at O is the complement of the signal at O. The write

control W must be HIGH for writing into the memory.

Fig.1 Functional diagram.

Fig.2 Pinning diagram.

January 1995

HEF4720BP; HEF4720VP(N): 16-lead DIL; plastic

(SOT38-1)

HEF4720BD; HEF4720VD(F): 16-lead DIL; ceramic

(cerdip) (SOT74)

HEF4720BT; HEF4720VT(D): 16-lead SO; plastic

(SOT109-1)

( ): Package Designator North America

FAMILY DATA

See Family Specifications.

2

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