HEF4720VTD Ver la hoja de datos (PDF) - Philips Electronics
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HEF4720VTD Datasheet PDF : 16 Pages
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Philips Semiconductors
256-bit, 1-bit per word random access memories
Product specification
HEF4720B
HEF4720V
(1) Leads should be so arranged to prevent cross-talk; thyristor connections must be short.
(2) Slope > 500 mV/µs in the vicinity of the threshold.
Fig.10 Using a thyristor to ensure a rapid fall of interface supply at switch-off or supply failure.
January 1995
15
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