HAF2012L Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

fabricante

HAF2012L

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

10.2 ± 0.3

HAF2012(L), HAF2012(S)

As of January, 2001

Unit: mm

4.44 ± 0.2

7.8

1.3 ± 0.2

6.6

1.2 ± 0.2

2.54 ± 0.5

1.27 ± 0.2

0.86

+

–

0.2

0.1

2.54 ± 0.5

0.1

+

–

0.2

0.1

2.2

0.4 ± 0.1

Hitachi Code

JEDEC

EIAJ

Mass (reference value)

LDPAK (S)-(2)

—

—

1.35 g

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