HA-2510/883
Die Characteristics
DIE DIMENSIONS:
65 mils x 57 mils x 19 mils
1650µm x 1450µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
0.3 x 105 A/cm2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2510/883: 40
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2510/883
+IN
-IN
BAL
COMP
V-
V+
BAL
OUT
5