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PMBFJ211

N-channel field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel field-effect transistors

Product specification

PMBFJ210; PMBFJ211; PMBFJ212

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDS

VGSO

VDGO

IG

Ptot

Tstg

Tj

PARAMETER

drain-source voltage

gate-source voltage

drain-gate voltage

forward gate current (DC)

total power dissipation

storage temperature

operating junction temperature

CONDITIONS

open drain

open source

Tamb ≤ 25 °C; note 1; see Fig.13

Note

1. Device mounted on an FR4 printed-circuit board.

MIN.

−

−

−

−

−

−65

−

MAX.

±25

−25

−25

10

250

150

150

UNIT

V

V

V

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient; note 1

Note

1. Device mounted on an FR4 printed-circuit board.

VALUE

500

UNIT

K/W

1997 Dec 01

3

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