GBL08 Ver la hoja de datos (PDF) - Vishay Semiconductors

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GBL08

Glass Passivated Single-Phase Bridge Rectifier

Vishay Semiconductors 

GBL005 thru GBL10

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10 UNIT

Maximum

instantaneous forward

4.0 A

VF

voltage drop per diode

1.00

V

Maximum DC reverse

current at rated DC blocking

voltage per diode

TA = 25 °C

TA = 125 °C

IR

5.0

500

µA

Typical junction

capacitance per diode

4.0 V, 1 MHz

CJ

95

40

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10

Typical thermal resistance

RθJA

RθJC

22 (2)

3.5 (1)

Notes:

(1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate

(2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE

GBL06-E3/45

2.18

45

GBL06-E3/51

2.18

51

BASE QUANTITY

20

400

DELIVERY MODE

Tube

Anti-static PVC tray

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

5.0

60 Hz Resistive or Inductive Load

4.0

Heat-Sink Mounting

3.0 x 3.0 x 0.11" Thick

(7.5 x 7.5 x 0.3 cm)

Aluminum Plate

3.0

2.0

P.C.B. Mounted

1.0 0.47 x 0.47" (12 x 12 mm)

Copper Pads with 0.375"

(9.5 mm) Lead Length

0

0

50

100

150

Ambient Temperature (°C)

Figure 1. Derating Curves Outzput Rectified Current

150

TJ = TJ Max.

Single Sine-Wave

100

50

1.0 Cycle

0

1

10

100

Number of Cycles at 60 Hz

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

2

For technical questions within your region, please contact one of the following: Document Number: 88609

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Revision: 30-Apr-08

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