GA400TD60S Ver la hoja de datos (PDF) - Vishay Semiconductors
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GA400TD60S
Vishay Semiconductors
GA400TD60S Datasheet PDF : 8 Pages
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GA400TD60S
Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 300 A
VGE = 15 V, IC = 400 A
VGE = 15 V, IC = 300 A, TJ = 125 °C
VGE = 15 V, IC = 400 A, TJ = 125 °C
VCE = VGE, IC = 250 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IFM = 300 A
IFM = 400 A
IFM = 300 A, TJ = 125 °C
IFM = 400 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
TYP.
-
1.14
1.24
1.08
1.21
4.6
0.075
1.8
1.48
1.63
1.50
1.70
-
MAX.
-
1.35
1.52
1.29
1.5
6.3
1
10
1.75
1.98
1.77
2.04
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
-
Eoff
IC = 400 A, VCC = 360 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 25 °C
-
Etot
-
Turn-on switching loss
Eon
-
Turn-off switching loss
Eoff
-
Total switching loss
Turn-on delay time
Rise time
Etot
-
td(on)
IC = 400 A, VCC = 360 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 125 °C
-
tr
-
Turn-off delay time
td(off)
-
Fall time
Reverse bias safe operating area
tf
-
RBSOA
TJ = 150 °C, IC = 1000 A, VCC = 400 V,
VP = 600 V, Rg = 22 VGE = 15 V to 0 V,
L = 500 μH
Diode reverse recovery time
trr
-
Diode peak reverse current
Irr
IF = 300 A, dIF/dt = 500 A/μs,
VCC = 400 V, TJ = 25 °C
-
Diode recovery charge
Qrr
-
Diode reverse recovery time
trr
-
Diode peak reverse current
Irr
IF = 300 A, dIF/dt = 500 A/μs,
VCC = 400 V, TJ = 125 °C
-
Diode recovery charge
Qrr
-
TYP.
8.5
113
121.5
21
163
184
532
377
496
1303
Fullsquare
150
43
3.9
236
64
8.6
MAX.
-
-
-
-
-
-
-
-
-
-
179
59
6.3
265
80
11.1
UNITS
mJ
ns
ns
A
μC
ns
A
μC
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For technical questions, contact: indmodules@vishay.com
Document Number: 93363
Revision: 31-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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