FS6M12653RTCTU Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

fabricante

FS6M12653RTCTU

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

FS6M12653RTC

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Static Drain-Source On Resistance (1)

Forward Transconductance (2)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

Note:

1. Pulse test : Pulse width ≤ 300µS, duty 2%

2. S = -1--

R

Symbol

Condition

BVDSS VGS=0V, ID=250µA

IDSS

VDS=650V, VGS=0V

VDS=520V

VGS=0V, TC=125°C

RDS(ON) VGS=10V, ID=1.8A

gfs VDS=50V, ID=1.8A

Ciss

Coss

Crss

VGS =0V, VDS=25V,

f = 1MHz

td(on)

tr

td(off)

tf

VDD=325V, ID=6.5A

(MOSFET switching

time are essentially

independent of

operating temperature)

Qg

VGS=10V, ID=6.5A,

VDS=520V (MOSFET

Qgs Switching time are

Essentially independent of

Qgd Operating temperature)

Min. Typ. Max. Unit

650 -

-

V

-

- 200 µA

-

- 300 µA

- 0.73 0.9 Ω

-

-

-

S

- 1820 -

-

185 -

pF

-

32

-

-

38

-

- 120 -

nS

- 200 -

- 100 -

-

60

-

-

10

-

nC

-

30

-

3

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