FQA13N80 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FQA13N80 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking Device
FQA13N80
FQA13N80_F109
Package
TO-3PN
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
VDS = 640 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
3.0
VGS = 10 V, ID = 6.3A
--
VDS = 50 V, ID = 6.3A (Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 12.6A,
--
RG = 25 Ω
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 640 V, ID = 12.6A,
--
VGS = 10 V
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =12.6A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.6 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13mH, IAS =12.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.6A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typ
--
0.95
--
--
--
--
--
0.58
13
2700
275
30
60
150
155
110
68
15
32
--
--
--
850
11.3
Max Unit
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
0.75
Ω
--
S
3500 pF
360 pF
39
pF
130
ns
310
ns
320
ns
230
ns
88
nC
--
nC
--
nC
12.6
A
50.4
A
1.4
V
--
ns
--
µC
©2007 Fairchild Semiconductor Corporation
2
FQA13N80_F109 Rev. C0
www.fairchildsemi.com
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