FDU2572 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDU2572 Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Device Marking
FDD2572
FDU2572
Device
FDD2572
FDU2572
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
150
VDS = 120V
-
VGS = 0V
TC = 150o
-
VGS = ±20V
-
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
-
4
V
ID=9A, VGS=10V
-
0.045 0.054
ID = 4A, VGS = 6V,
-
0.050 0.075
Ω
ID=9A, VGS=10V, TC=175oC
-
0.126 0.146
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
-
1770
-
pF
-
183
-
pF
-
40
-
pF
VGS = 0V to 10V
-
VGS = 0V to 2V VDD = 75V
-
ID = 9A
-
Ig = 1.0mA
-
26
34
nC
3.3
4.3
nC
8
-
nC
5
-
nC
-
6
-
nC
Resistive Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 75V, ID = 9A
VGS = 10V, RGS = 11.0Ω
tf
Fall Time
tOFF
Turn-Off Time
-
-
36
ns
-
11
-
ns
-
14
-
ns
-
31
-
ns
-
14
-
ns
-
-
66
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.2mH, IAS = 19A.
ISD = 9A
-
ISD = 4A
-
ISD = 9A, dISD/dt =100A/µs
-
ISD = 9A, dISD/dt =100A/µs
-
-
1.25
V
-
1.0
V
-
74
ns
-
169 nC
©2002 Fairchild Semiconductor Corporation
FDD2572 / FDU2572 Rev. B
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