FDB603AL Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
FDB603AL Datasheet PDF : 4 Pages
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Typical Electrical Characteristics (continued)
10
I D = 25A
8
6
VDS = 5.0V
10V
20V
4
2
0
0
5
10
15
20
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
200
100
Limit
50
R DS(ON)
20
10
5
VGS = 10V
SINGLE PULSE
2
RθJC= 3 oC/W
1
TA = 25 °C
10µs100µs
1ms
D1C0100mmss
0.5
0.5
1
3
5
10
20 30 50
V DS , DRAIN-SOURCE VOLTAGE (V))
Figure 9. Maximum Safe Operating Area.
2000
1000
500
Ciss
Coss
200
100
f = 1 MHz
Crss
VGS = 0V
60
0.1
0.3
1
4
10
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
2000
1600
1200
800
400
0
0.01
SINGLE PULSE
RθJC =3.0° C/W
TC = 25°C
0.1
1
10
100
SINGLE PULSE TIME (ms)
1000
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.05 0.1
0.5
1
5
10
t1 , TIME (ms)
R θJC (t) = r(t) * RθJC
R θJC = 3.0 °C/W
P(pk)
t1
t2
TJ - TC = P * R θJC (t)
Duty Cycle, D = t1 /t2
50
100
500 1000
Figure 11. Transient Thermal Response Curve.
FDP603AL Rev.D
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