DS1135LU-10 Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS1135LU-10

3V 3-in-1 High-Speed Silicon Delay Line

Dallas Semiconductor -> Maxim Integrated 

TEST CONDITIONS

Ambient Temperature: 25°C ± 3°C

Supply Voltage (VCC ): 3.3V ± 0.1V

Input Pulse:

High: 3.0V ± 0.1V

Low: 0.0V ± 0.1V

Source Impedance: 50W Max.

Rise and Fall Time: 3.0ns Max. — Measured between 0.6V and 2.4V.

Pulse Width: 500ns

Pulse Period: 1ms

Output Load Capacitance: 15pF

Output: Each output is loaded with the equivalent of one 74F04 input gate.

Data is measured at the 1.5V level on the rising and falling edges.

DS1135-L

Note: The above conditions are for test only and do not restrict the devices under other data sheet

conditions.

TIMING DIAGRAM

tRISE

PERIOD

tFALL

80%

20%

IN

OUT

1.5V

1.5V

tWI

tPLH

tPHL

tOR

1.5V

1.5V

tWI

tOF

1.5V

NOTES:

1. All voltages are referenced to ground.

2. Power-up time is the time from the application of power to the time stable delays are being produced

at the output.

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