CY7C199C-12VC Ver la hoja de datos (PDF) - Cypress Semiconductor

Número de pieza

componentes Descripción

fabricante

CY7C199C-12VC

32K x 8 Static RAM

Cypress Semiconductor 

Read Cycle No. 2 12 13

tRC

Address

CE

OE

Data Out

VCC

Current

High Z

ICC

ISB

tLZCE

tPU

Write Cycle No. 1 (WE Controlled)14 15 16

tACE

tLZOE

tDOE

50%

tWC

Address

tSCE

CE

WE

tAW

tSA

tPWE

OE

Data In/Out

tHZOE

Undefined

see footnotes

tSD

Data-In Valid

CY7C199C

tHZCE

tHZOE

Data Valid

High Z

tPD

50%

tHA

tHD

Notes:

12. This cycle is OE Controlled and WE is HIGH read cycle.

13. Address valid prior to or coincident with CE transition LOW.

14. This cycle is WE controlled, OE is HIGH during write.

15. Data In/Out is high impedance if OE = VIH.

16. During this period the I/Os are in output state and input signals

should not be applied.

Document #: 38-05408 Rev. *A

Page 8 of 12

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