CPV364M4F Ver la hoja de datos (PDF) - International Rectifier
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CPV364M4F Datasheet PDF : 10 Pages
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CPV364M4F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.35 1.5
IC = 15A
VGE = 15V
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
9.2
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
1.60
1.35
–––
-12
12
–––
–––
1.3
1.2
––– V
–––
6.0
––– mV/°C
––– S
250 µA
2500
1.7 V
1.6
IC = 27A
See Fig. 2, 5
IC = 15A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Charge
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
––– 100 160
––– 15 23
––– 37 56
––– 42 –––
––– 18 –––
––– 220 330
––– 160 240
––– 0.46 –––
––– 0.86 –––
––– 1.32 1.8
––– 39 –––
––– 19 –––
––– 410 –––
––– 290 –––
––– 2.5 –––
––– 2200 –––
––– 140 –––
––– 29 –––
––– 42 60
––– 74 120
––– 4.0 6.0
––– 6.5 10
––– 80 180
––– 220 600
––– 188 –––
––– 160 –––
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/µs
IC = 15A
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
IC = 15A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 15A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C
14
TJ = 25°C See Fig.
IF = 15A
TJ = 125°C
15
VR = 200V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
See Fig.
16
See Fig.
17
di/dt =200Aµs
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