CEDF634/CEUF634
12
VGS=10,9,8,7V
10
8
VGS=6V
6
4
VGS=5V
2
VGS=4V
0
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
101
100 TJ=150 C
-55 C
25 C
10-1
2
4
1.VDS=40V
2.Pulse Test
6
8
10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1200
1000
Ciss
800
600
400
200
Coss
Crss
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=5.1A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3