BYG10M-E3/TR3(2020) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
BYG10M-E3/TR3 Datasheet PDF : 5 Pages
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BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
2000
1600
1200
800
TA = 100 °C
TA = 125 °C
TA = 75 °C
TA = 50 °C
TA = 25 °C
400
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision:21-Feb-2020
4
Document Number: 88957
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