BUZ215 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
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fabricante
BUZ215 Datasheet PDF : 9 Pages
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BUZ 215
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• FREDFET
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 215
VDS
ID
500 V 5 A
RDS(on)
1.5 Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Continuous drain current
TC = 30 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-A1400-A2
Values
Unit
500
V
500
A
5
20
± 20
V
W
75
-55 ... + 150 °C
-55 ... + 150
≤ 1.67
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
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