BUZ10S2 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
fabricante
BUZ10S2 Datasheet PDF : 9 Pages
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BUZ 10 S2
Not for new design
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 23 A, VDD = 25 V
RGS = 25 Ω, L = 15.1 µH
9
mJ
EAS
7
6
5
4
3
2
1
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 38 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 4 8 12 16 20 24 28
34
QGate
71
V
68
V(BR)DSS
66
64
62
60
58
56
54
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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