BUP200D Ver la hoja de datos (PDF) - Siemens AG
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BUP200D Datasheet PDF : 8 Pages
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BUP 200 D
Forward characteristics of fast recovery
reverse diode IF = f (VF)
parameter: Tj
4.5
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
Diode
10 1
A
IF
3.5
3.0
K/W
Z
thJC
10 0
2.5
T j=125°C
Tj=25°C
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0
V
3.0
VF
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
7
Dec-06-1995
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