BULK128 Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante

BULK128

High voltage fast-switching NPN power transistor

STMicroelectronics 

BULK128

1

Electrical ratings

Table 2. Absolute maximum rating

Symbol

Parameter

VCES

VCEO

VEBO

IC

ICM

IB

IBM

Ptot

Tstg

TJ

Collector-emitter voltage (VBE = 0)

Collector-emitter voltage (IB = 0)

Emitter-base voltage (IC= 0, IB= 2 A, tp< 10 µs)

Collector current

Collector peak current (tP < 5ms)

Base current

Base peak current (tP < 5ms)

Total dissipation at Tc = 25°C

Storage temperature

Max. operating junction temperature

Table 3.

Symbol

Thermal data

Parameter

Rthj-case Thermal resistance junction - case

Rthj-amb Thermal resistance junction - ambient

Electrical ratings

Value

700

400

V(BR)EBO

4

8

2

4

55

-65 to 150

150

Unit

V

V

V

A

A

A

A

W

°C

°C

Value

2.27

80

Unit

°C/W

°C/W

3/11

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