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fabricante

BUJ303A

NPN power transistor

NXP Semiconductors. 

NXP Semiconductors

BUJ303A

NPN power transistor

102

IC

(A)

ICMm1a0x

ICmax

1

003aag029

duty cycle = 0.01

II(3)

tp = 10 µs

(1)

100 µs

10-1

(2)

1 ms

I(3)

10 ms

DC

Fig 4.

10-2

1

III(3)

10

102

103

VCEclamp (V)

(1) Ptot maximum and Ptot peak maximum lines.

(2) Second breakdown limits.

(3) I = Region of permissible DC operation.

II = Extension for repetitive pulse operation.

III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs.

Forward bias safe operating area for Tmb ≤ 25 °C

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

Conditions

thermal resistance from junction to mounting base see Figure 5

thermal resistance from junction to ambient

in free air

Min Typ Max Unit

-

-

1.25 K/W

-

60 -

K/W

10

Zth(j-mb)

(K/W)

1 δ = 0.5

0.2

0.1

0.05

10-1

0.02

0

003aag030

Ptot

tp

δ=

T

10-2

10-5

10-4

10-3

10-2

10-1

tp

t

T

1

10

tp (s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width

BUJ303A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 6 — 8 February 2012

© NXP B.V. 2012. All rights reserved.

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