BSP316 Ver la hoja de datos (PDF) - Infineon Technologies

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BSP316

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

SIPMOS Small-Signal-Transistor

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Gate

pin1

BSP 316 P

Product Summary

VDS

-100 V

RDS(on) 1.8 Ω

ID

-0.68 A

P-SOT223-4-1

Drain

pin 2/4

Source

pin 3

Type

Package

Ordering Code Tape and Reel Information Marking

BSP 316 P P-SOT223-4-1 Q67042-S4165 -

BSP316P

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

ID puls

dv/dt

IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

Gate source voltage

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

-0.68

-0.54

-2.72

6

±20

1.8

-55... +150

55/150/56

Unit

A

kV/µs

V

W

°C

Page 1

2002-07-24

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