Q62702-S655 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
fabricante
Q62702-S655 Datasheet PDF : 7 Pages
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BSP 135
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = 3 V, ID = 1 mA, (spread)
Forward characteristics of reverse diode
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 3 V
Transient thermal impedance ZthJA = f (tp)
parameter: D = tp / T
Semiconductor Group
6
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