Q62702-S655 Ver la hoja de datos (PDF) - Siemens AG
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Q62702-S655 Datasheet PDF : 7 Pages
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BSP 135
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain-source breakdown voltage
VGS = − 3 V, ID = 0.25 mA
Gate threshold voltage
VDS = 3 V, ID = 1 mA
Drain-source cutoff current
VDS = 600 V, VGS = − 3 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-resistance
VGS = 0 V, ID = 0.01 A
V(BR)DSS
V
600
–
–
VGS(th)
− 1.8 − 1.5
− 0.7
IDSS
–
–
IGSS
–
RDS(on)
–
–
100
nA
–
200
µA
nA
10
100
Ω
40
60
Dynamic Characteristics
Forward transconductance
gfs
VDS ≥ 2 × ID × R , DS(on)max ID = 0.01 A
Input capacitance
Ciss
VGS = − 3 V, VDS = 25 V, f = 1 MHz
Output capacitance
Coss
VGS = − 3 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
VGS = − 3 V, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
td(on)
VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω, tr
ID = 0.2 A
Turn-off time toff, (toff = td(off) + tf)
td(off)
VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω, tf
ID = 0.2 A
S
0.01
0.04
–
pF
–
110
150
–
8
12
–
3
5
–
4
6
ns
–
10
15
–
15
20
–
20
30
Semiconductor Group
2
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