BLV99/SL Ver la hoja de datos (PDF) - Philips Electronics
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fabricante
BLV99/SL Datasheet PDF : 10 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLV99/SL
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage
V(BR)EBO
emitter-base breakdown voltage
ICES
collector-emitter leakage current
hFE
DC current gain
ESBR
second breakdown energy
Cc
collector capacitance
Cre
feedback capacitance
CONDITIONS
open emitter;
IC = 5 mA
VBE = 0;
IC = 10 mA
open collector;
IE = 0.5 mA
VBE = 0;
VCE = 27 V
VCE = 20 V;
IC = 150 mA
L = 25 mH;
RBE = 10 Ω;
f = 50 Hz
VCB = 24 V;
IE = Ie = 0;
f = 1 MHz
VCE = 24 V;
IC = 0;
f = 1 MHz
MIN.
50
27
3.5
−
25
0.5
−
−
TYP.
−
−
−
−
−
−
3
1.3
MAX. UNIT
−
V
−
V
−
V
2
mA
−
−
mJ
−
pF
−
pF
100
handbook, halfpage
hFE
80
MBK467
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
IC (A)
VCE = 20 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current, typical values.
8
handbook, halfpage
Cc
(pF)
6
MBK468
4
2
0
0
10
20
30
VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.4 Collector capacitance as a function of
collector-base voltage, typical values.
September 1991
4
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