BF1203 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BF1203 Datasheet PDF : 20 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTION
The BF1203 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very
good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor is
encapsulated in a SOT363 micro-miniature plastic
package.
PINNING - SOT363
PIN
1
gate 1 (a)
2
gate 2
3
drain (a)
4
drain (b)
5
source
6
gate 1 (b)
DESCRIPTION
handbook, halfpage
654
g1 (b) s
d (b)
123
Top view
AMP
a
AMP
b
g1 (a) g2
d (a) MBL254
Marking code: L2-
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified
VDS
ID
yfs
Cig1-s
Crss
NF
Xmod
drain-source voltage
10
drain current (DC)
30
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
amp. a: ID = 15 mA
amp. b: ID = 12 mA
amp. a: ID = 15 mA; f = 1 MHz
amp. b: ID = 12 mA; f = 1 MHz
f = 1 MHz
23 28 35
25 30 40
2.6 3.1
1.7 2.2
15
noise figure
cross-modulation
amp. a: f = 400 MHz; ID = 15 mA
1
1.8
amp. b: f = 800 MHz; ID = 12 mA
1.1 1.8
amp. a: input level for k = 1% at 40 dB AGC 105
amp. b: input level for k = 1% at 40 dB AGC 100 105
V
mA
mS
mS
pF
pF
fF
dB
dB
dBV
dBV
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2001 Apr 25
2
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