BF1211 Ver la hoja de datos (PDF) - Philips Electronics
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fabricante
BF1211 Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
25
30
40
input capacitance at gate 1 f = 1 MHz
−
2.1 2.6
input capacitance at gate 2 f = 1 MHz
−
1.1 −
output capacitance
f = 1 MHz
−
0.9 −
reverse transfer capacitance f = 1 MHz
−
15
30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
−
3.5 −
f = 400 MHz; YS = YS (opt)
−
0.9 1.6
f = 800 MHz; YS = YS (opt)
−
1.3 2
power gain
f = 200 MHz; GS = 2 mS; BS = BS (opt); −
GL = 0.5 mS; BL = BL (opt)
34
−
f = 400 MHz; GS = 2 mS; BS = BS (opt); −
GL = 1 mS; BL = BL (opt)
29
−
f = 800 MHz; GS = 3.3 mS; BS = BS (opt); −
GL = 1 mS; BL = BL (opt)
24
−
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90
−
−
at 10 dB AGC
−
92
−
at 40 dB AGC
100 105 −
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Note
1. Measured in test circuit Fig.21.
2003 Dec 16
5
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