BF1100R Ver la hoja de datos (PDF) - NXP Semiconductors.
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BF1100R Datasheet PDF : 15 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handboo1k,0h2alfpage
y is
(mS)
10
1
10 1
10
MLD172
b is
g is
102
f (MHz)
10 3
VDS = 9 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.19 Input admittance as a function of
frequency; typical values.
10 3
y rs
(µS)
10 2
10
MLD173 10 3
ϕ rs
(deg)
ϕ rs
10 2
y rs
10
1
10
1
102
f (MHz)
10 3
VDS = 9 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.20 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 2
y fs
(mS)
10
1
10
MLD174
10 2
handbook1,0halfpage
yos
ϕfs
(mS)
y fs
(deg)
1
ϕfs
10
10 1
102
f (MHz)
1
10 3
10 2
10
MLD175
bos
gos
102
f (MHz)
10 3
VDS = 9 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.21 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 9 V; VG2 = 4 V.
ID =10 mA; Tamb = 25 °C.
Fig.22 Output admittance as a function of
frequency; typical values.
Rev. 02 - 13 November 2007
9 of 15
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