BF1100R Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
fabricante
BF1100R Datasheet PDF : 15 Pages
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NXP Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handbook, full pagewidth
VAGC
R1
10 k Ω
C1
4.7 nF
C3 12 pF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG
VGG
DUT
L1
≈ 450 nH
C4
RL
50 Ω
4.7 nF
V DS
MGC420
For VGG = VDS = 9 V, RG = 180 kΩ.
For VGG = VDS = 12 V, RG = 250 kΩ.
Fig.27 Cross-modulation test set-up.
Rev. 02 - 13 November 2007
11 of 15
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