BDV67(2012) Ver la hoja de datos (PDF) - Comset Semiconductors

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BDV67
(Rev.:2012)

NPN SILICON DARLINGTONS POWER TRANSISTORS

Comset Semiconductors 

BDV67-A-B-C-D

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

BDV67

VBE

Base-Emitter Voltage

(*)

VCE= 3 V, IC= 10 A

BDV67A

BDV67B

BDV67C

-

- 2,5 V

BDV67D

BDV67

BDV67A

VF

Diode forward voltage IF= 10 A

BDV67B -

-

3

V

BDV67C

BDV67D

BDV67

Cc

Collector capacitance

IE= 0 A, VCB= 10 V

f= 1 MHz

BDV67A

BDV67B

BDV67C

-

300

-

pF

BDV67D

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

26/09/2012

COMSET SEMICONDUCTORS

4/5

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