Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896A/898A/900A
DESCRIPTION
·With TO-220C package
·Complement to type BD895A/897A/901A
·DARLINGTON
APPLICATIONS
·For use in output stages in audio equipment,
general amplifier,and analogue switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
CONDITIONS
固I电NC半HANGE SEMICONDUCTOR BD896A
VCBO
Collector-base voltage BD898A Open emitter
BD900A
BD896A
VALUE
-45
-60
-80
-45
UNIT
V
VCEO
Collector-emitter voltage BD898A Open base
-60
V
BD900A
-80
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current-DC
-8
A
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
Ta=25℃
-300
mA
70
W
2
150
℃
-65~150
℃