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BD89630EFJ(2011) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
fabricante
BD89630EFJ
(Rev.:2011)
ROHM
ROHM Semiconductor 
BD89630EFJ Datasheet PDF : 4 Pages
1 2 3 4
1/3
STRUCTURE
PRODUCT NAME
TYPE
Silicon Monolithic Integrated Circuit
1ch DCDC PWM Converter IC built in synchronous rectifier
BD89630EFJ
FEATURES
Output VoltageAdjustable(1.02.5), Output Current2.0A
High Efficiency and Fast Transient Response
ABSOLUTE MAXIMUM RATINGTa=25℃)
Parameter
Power Supply Voltage
Symbol
VCC
Limit
Unit
-0.3+7 *1
V
EN Voltage
VEN
-0.3+7
V
SWCOMP Voltage
Power Dissipation 1
Power Dissipation 2
VSW, VCOMP
-0.3+7
V
Pd1
0.5 *2
W
Pd2
3.76 *3
W
Operating Temperature Range
Topr
-25+85
Storage Temperature Range
Tstg
-55+150
Maximum Junction Temperature
Tjmax
+150
*1 Pd, ASO and Tjmax=150should not be exceeded.
*2 Reduced by 4.0mW for increase in Ta of 1above 25.
*3 Reduced by 30.0mW for increase in Ta of 1above 25.
(when mounted on a board 70.0mm × 70.0mm × 1.6mm Glass-epoxy PCB)
OPERATING CONDITIONSTa=-25+85℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Power Supply Voltage
VCC
2.7
5.0
5.5
V
EN Voltage
VEN
0
-
Output Voltage range
VOUT
1.0
-
SW Average Output Current
ISW
-
-
*4In case set output voltage 1.6V or more, VccMin. = Vout +1.8V
*5 Pd should not be exceeded.
This product is not designed for protection against radioactive rays.
Vcc
V
2.5*4
V
2.0*5
A
REV. B

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