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BD8964FVM-TR Datasheet PDF : 25 Pages
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BD8964FVM
Datasheet
5. Consideration on Permissible Dissipation and Heat Generation
Since this IC functions with high efficiency without significant heat generation in most applications, no special
consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including
lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat
generation must be carefully considered.
For dissipation, only conduction losses due to the DC resistance of inductor and ON-Resistance of FET are considered.
This is because conduction losses are most significant among other dissipations mentioned above such as gate
charge/discharge dissipation and switching dissipation.
1000
800
600 587.4mW
400 387.5mW
200
0
0 25 50 75 85 100 125 150
Ambient Temperature :Ta[°C]
mounted on glass epoxy PCB
θj-a=212.8°C/W
using an IC alone
θj-a=322.6°C/W
  P
RON
IOUDT
2RRONOPN
1D
RONN
Where:
D is the ON duty (=VOUT/VCC)
RONP is the ON-Resistance of P-Channel MOS FET
RONN is the ON-Resistance of N-Channel MOS FET
IOUT is the Output current
Figure 25 Thermal Derating Curve
(MSOP8)
If VCC=5V, VOUT=1.5V, RCOIL=0.15, RONP=0.35, RONN=0.25
IOUT=0.8A, for example,
D=VOUT/VCC=1.5/5=0.3
RON=0.3 x 0.35+(1-0.3) x 0.25
=0.105+0.175
=0.28[]
P=0.82 x (0.15+0.28) 275.2[mW]
Since RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes higher. Taking into
consideration the dissipation shown above, thermal design must be carried out with allowable sufficient margin.
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
12/21
TSZ02201-0J3J0AJ00050-1-2
22.Jan.2015 Rev.003

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