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BD8964FVM-TR Ver la hoja de datos (PDF) - ROHM Semiconductor

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BD8964FVM-TR Datasheet PDF : 25 Pages
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BD8964FVM
Datasheet
4. Switching Regulator Efficiency
Efficiency η may be expressed by the equation shown below:
VOUT
VIN
IOUT
I IN
100
POUT
PIN
100
POUT
POUT Pd
100
%
Efficiency may be improved by reducing the switching regulator power dissipation factors Pdα as follows:
Dissipation factors:
(1) ON-Resistance dissipation of inductor and FETPd(I2R)
  Pd I 2 R IOUT 2 RCOIL RON
Where:
RCOIL is the DC resistance of inductor
RON is the ON-Resistance of FET
IOUT is the Output current
(2) Gate charge/discharge dissipationPd(Gate)
Pd GateCgs f V 2
Where:
Cgs is the gate capacitance of FET
f is the switching frequency
V is the gate driving voltage of FET
(3) Switching dissipationPd(SW)
  Pd SW
VIN 2
CRSS I OUT
I DRIVE
f
Where:
CRSS is the reverse transfer capacitance of FET
IDRIVE is the peak current of gate
(4) ESR dissipation of capacitorPd(ESR)
Pd ESRI RMS 2 ESR
Where:
IRMS is the ripple current of capacitor
ESR is the equivalent series resistance
(5) Operating Current Dissipation of ICPd(IC)
Pd ICVIN I CC
Where:
ICC is the circuit current
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TSZ2211115001
11/21
TSZ02201-0J3J0AJ00050-1-2
22.Jan.2015 Rev.003

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