BD232 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

fabricante

BD232

Silicon NPN Power T ransistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD232

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 150mA; IB= 15mA

ICES

Collector Cutoff Current

VCE= 500V; VBE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Cain

IC= 50mA ; VCE= 5V

hFE-2

DC Current Cain

IC= 150mA ; VCE= 5V

300

V

1.0

V

100 μA

10 μA

25

150

20

isc Website：www.iscsemi.cn

2

Share Link: