BD232 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
fabricante
BD232 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD232
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
APPLICATIONS
·Designed for use in power output stages and line driver
in TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
500
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
0.5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.25
A
20
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 6.25 ℃/W
isc Website：www.iscsemi.cn
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