BC847CTT1 Ver la hoja de datos (PDF) - ON Semiconductor
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BC847CTT1 Datasheet PDF : 6 Pages
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BC847ATT1, BC847BTT1, BC847CTT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
V
BC847 Series
45
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mA)
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)CES
V
BC847 Series
50
−
−
V(BR)CBO
V
BC847 Series
50
−
−
V(BR)EBO
V
BC847 Series
6.0
−
−
Collector Cutoff Current (VCB = 30 V)
ON CHARACTERISTICS
(VCB = 30 V, TA = 150°C)
ICBO
−
−
−
15
nA
−
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC847A
BC847B
BC847C
hFE
−
−
90
−
−
150
−
−
270
−
(IC = 2.0 mA, VCE = 5.0 V)
BC847A
BC847B
BC847C
110
180
220
200
290
450
420
520
800
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
VBE(sat)
−
−
−
0.25
V
−
0.6
0.7
−
V
0.9
−
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
−
−
770
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
−
−
4.5
pF
Noise Figure
NF
dB
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
−
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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