BC807-16W(2018) Ver la hoja de datos (PDF) - Diotec Semiconductor Germany
Número de pieza
componentes Descripción
fabricante
BC807-16W Datasheet PDF : 2 Pages
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BC807W ... BC808W
Characteristics
DC current gain – Kollektor-Basis-Stromverhältnis 1)
Tj = 25°C
- VCE = 1 V, - IC = 100 mA
Group -16
Group -25
hFE
Group -40
- VCE = 1 V, - IC = 500 mA
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCEsat
- VCE = 1 V, - IC = 500 mA
- VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 20 V, (E open)
- VCB = 20 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- ICBO
- VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IEBO
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, - IE =ie = 0, f = 1 MHz
CCBO
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
RthA
Min.
Kennwerte
Typ.
Max.
100
–
250
160
–
400
250
–
600
40
–
–
–
–
0.7 V
–
–
1.2 V
–
–
100 nA
–
–
5 µA
–
–
100 nA
80 MHz
–
–
–
–
12 pF
< 625 K/W 2)
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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