BB814-1-GS08 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

fabricante

BB814-1-GS08

Dual Varicap Diode

Vishay Semiconductors 

BB814

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Reverse current

Diode capacitance 1)

VR = 16 V

VR = 16 V, Tj = 60 °C

VR = 2 V

IR

IR

BB814-1

CD

43

20

nA

200

nA

45

pF

Diode capacitance

Capacitance ratio

Series resistance

VR = 8 V

VR = 2 V, 8 V, f = 1 MHz

CD = 38 pF, f = 100 MHz

BB814-2

BB814-1

BB814-2

CD

CD

CD

CD2/ CD8

rs

44.5

19.1

19.75

2.05

46.5

pF

21.95

pF

22.70

pF

2.25

0.5

Ω

1) In the reverse voltage range of VR = (2 to 8 V) for 4 diodes taped in sequence the max. deviation is 3 %.

Package Dimensions in mm (Inches)

0.4 (.016) 0.4 (.016)

3.1 (.122)

2.8 (.110)

0.4 (.016)

3

0.175 (.007)

0.098 (.005)

0.1 (.004) max.

2.6 (.102)

2.35 (.092)

Mounting Pad Layout

0.52 (0.020)

ISO Method E

0.9 (0.035)

2.0 (0.079)

1

0.95 (.037)

2

0.95 (.037)

0.95 (0.037)

0.95 (0.037)

17418

www.vishay.com

2

Document Number 85555

Rev. 1.6, 15-Apr-05

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