BAW56-V Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
BAW56-V Datasheet PDF : 4 Pages
| |||
BAW56-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
1) Device on fiberglass substrate, see layout
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 1 mA
Forward voltage
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
Reverse current
VR = 70 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
Diode capacitance
VF = VR = 0, f = 1 MHz
Reverse recovery time
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
Tj = 100 °C
10
1
25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Symbol
Value
Unit
RthJA
430
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Symbol
Min.
Typ.
Max.
Unit
VF
715
mV
VF
855
mV
VF
1000
mV
VF
1250
mV
IR
2.5
µA
IR
100
µA
IR
30
µA
CD
2
pF
trr
6
ns
22290
Figure 2. Peak forward current IFM = f (tp)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85549
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.8, 12-Aug-10
Share Link: 