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fabricante

BAT754C,215

Schottky barrier double diodes

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier (double) diodes

Product data sheet

BAT754 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VR

IF

IFRM

IFSM

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

Tstg

Tj

Tamb

storage temperature

junction temperature

operating ambient temperature

tp ≤ 1 s; δ ≤ 0.5

t = 8.3 ms half sinewave;

JEDEC method

MIN. MAX. UNIT

−

30

V

−

200 mA

−

300 mA

−

600 mA

−65 +150 °C

−

125 °C

−65 +125 °C

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 μs; δ ≤ 0.02.

CONDITIONS

TYP. MAX. UNIT

see Fig.6

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 30 mA

IF = 100 mA

−

200 mV

−

260 mV

−

340 mV

−

420 mV

600 −

mV

VR = 25 V; note 1; see Fig.7

−

f = 1 MHz; VR = 1 V; see Fig.8 −

2

μA

10

pF

THERMAL CHARACTERISTICS

SYMBOL

Rth j-a

PARAMETER

thermal resistance from junction to

ambient

Note

1. Refer to SOT23 standard mounting conditions.

CONDITIONS

note 1

VALUE

500

UNIT

K/W

2003 Mar 25

3

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