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AT49BV040A

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory

Atmel Corporation 

Features

• Single Supply for Read and Write: 2.7 to 3.6V

• Fast Read Access Time – 70 ns

• Internal Program Control and Timer

• Sector Architecture

– One 16K Bytes Boot Block with Programming Lockout

– Two 8K Bytes Parameter Blocks

– Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)

• Fast Erase Cycle Time – 7 Seconds

• Byte-by-Byte Programming – 30 µs/Byte Typical

• Hardware Data Protection

• DATA Polling for End of Program Detection

• Low Power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

Description

The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its

4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to

70 ns with power dissipation of just 54 mW over the commercial temperature range.

Pin Configurations

Pin Name

A0 - A18

CE

OE

WE

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

PLCC Top View

A7 5

A6 6

A5 7

A4 8

A3 9

A2 10

A1 11

A0 12

I/O0 13

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

VSOP Top View (8 x 14 mm) or

TSOP Top View (8 x 20 mm)

Type 1

A11 1

A9 2

A8 3

A13 4

A14 5

A17 6

WE 7

VCC 8

A18 9

A16 10

A15 11

A12 12

A7 13

A6 14

A5 15

A4 16

32 OE

31 A10

30 CE

29 I/O7

28 I/O6

27 I/O5

26 I/O4

25 I/O3

24 GND

23 I/O2

22 I/O1

21 I/O0

20 A0

19 A1

18 A2

17 A3

4-megabit

(512K x 8)

Single 2.7-volt

Battery-Voltage™

Flash Memory

AT49BV040A

Rev. 3358A–FLASH–6/03

1

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